Izikhitshane zeTungsten ezenzelwe iVacuum Coating
Uhlobo kunye nobukhulu
umxholo | ubukhulu (mm) | Ubude bendawo (mm) | Ubunzulu beSikhala(mm) |
isikhephe se tungsten | 0.2*10*100 | 50 | 2 |
0.2*15*100 | 50 | 7 | |
0.2*25*118 | 80 | 10 | |
0.3*10*100 | 50 | 2 | |
0.3*12*100 | 50 | 2 | |
0.3*15*100 | 50 | 7 | |
0.3*18*120 | 70 | 3 | |
Qaphela: Ubungakanani obukhethekileyo bunokwenziwa ngokweemfuno zabathengi |
Iimbonakalo
Isikhephe seTungsten sisetyenziselwa ivacuum evaporator yezixhobo zegranular.Izikhephe zeTungsten zisenokusetyenziswa ukwenza umphunga iingcingo ezibhityileyo, ezimfutshane okanye iingcingo ezimanzi.Isikhephe somphunga se-Tungsten sikulungele ukwenza umfuniselo okanye umsebenzi wokwenza umfuziselo kwinkqubo encinci yokuphuphuma komphunga, njengengqayi yentsimbi.Njengesikhongozeli esikhethekileyo nesisebenzayo esimile okwephenyane, isikhephe se-tungsten sisetyenziswa kakhulu ekutshizweni kwe-electron ray, sintering kunye nokufakwa kwi-vacuum coating.
Isikhephe seTungsten evaporation senziwa kumgca okhethekileyo wemveliso;inkampani yethu inokubonelela abathengi ngeemveliso ezikumgangatho ophezulu.Siqinisekisa ukuba izinto ze-tungsten ekrwada esizisebenzisayo zicocekile kakhulu.Itekhnoloji ephezulu kunye neendlela zonyango ezikhethekileyo zisetyenziswa kunyango olungaphezulu lweemveliso zethu.Inkampani yethu inokuvelisa isikhephe se-tungsten sokufunxa umphunga ngokwemizobo yabathengi.
Usetyenziso
Isikhephe seTungsten sinokusetyenziswa kushishino olukhanyayo, ishishini lombane, ishishini lomkhosi, ishishini lesemiconductor: ukutyabeka, iiseramikhi ezichanekileyo ze-sintering, i-capacitor sintering, intsimbi yentsimbi, isitshizi se-electron beam.Ithagethi yokuxilongwa kwe-X-ray, i-crucible, i-heater element, i-X-ray radiation shield, i-sputtering target, i-electrode, i-semiconductor base plate, kunye ne-electron tube component, i-emission cathode ye-electron beam evaporation, kunye ne-cathode kunye ne-anode ye-ion implanter.